Faculty Member at
International Center for Nano Technology
and Applied Adhesion

---

 

Somenath Chatterjee

 

Name Somenath Chatterjee Position  Associate Professor: International Centre for Nano Technology and Applied Adhesion (ICNTAA), Sikkim Manipal University, Sikkim, India Academic Degree Ph.D Materials Science, Indian Institute of Technology, Kharagpur, India Fax +91-3592246112 E-mail somenath@gmail.com Postal Address International Centre for Nano Technology and Applied Adhesion; Sikkim Manipal Institute of Technology, Majitar, 737132 Sikkim, India

Research Areas and Interests

• Advance concepts of cost-effective photovoltaic solar cells (Process flow) based on nano-/ poly-crystalline Silicon film deposited on foreign substrates
• Charge transport phenomena of semiconductor devices
• Integration issues of high-k materials (e.g. HfO2, ZrO2, mixed metal oxides and their silicates) as gate insulators and metal nitrides (e.g. TaN, TiN, WN) as gate electrodes in CMOS devices for sub-45 nm technology node

Awards and Honors

• International Travel Grant, Dept. of Science & Technology, India, 2011.
• Post-Doctoral Fellowship, Centre National de la Recherche Scientifique (CNRS), France (2008 –2009)
• Post-Doctoral Fellowship, National Science Foundation (NSF), USA (2003 – 2006)
• PhD Fellowship, Ministry of Information Technology, India (2001- 2003)

Synergistic Activities
Reviewer, Journal of Electrochemical Society
Activities

• Delivered a lecture as an invited speaker on “Nanoelectronics- Moving technology forward” in a workshop on Nanotechnology arranged by V.L.B Janakiammal College of Engineering & Technology - Coimbatore, Tamil Nadu, India, 2006
• Delivered a lecture as an invited speaker on “Future of Nanoelectronics” in Techno India, Salt Lake, West Bengal, India, 2007
• For Student awareness about Nanotechnology presented an exclusive interview in the Gateway e-journal (the Guest Column) from Indian Society of Technical Education (ISTE), VIT Chapter please visit: http://www.vit.ac.in/iste/gateway/guest.html

List of Publications
Journals:

• Title: Modeling of electron transport in III- Nitride Compound Semiconductors for Low Field and Low Temperature Applications Authors: S. Chakrabarti, S. Gupta Chatterjee, D. Chattopadhyay and S. Chatterjee Department of Electronics and Communication Engineering, Techno India, Salt Lake, Kolkata, India Journal: ECS Transactions, Vol. 34 (1), P. 125-136, 2011.
• Title: Effects of Interfacial charges on doped and undoped HfOx stack layer with TiN metal gate electrode for nano-scaled CMOS generation Authors: S. Chatterjee1 and Y. Kuo2 1Department of Electronics and Communication Engineering, Techno India, Salt Lake, Kolkata, India 2Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX, USA Journal: J. Nano- Electron. Phys., Vol. 3, No1, P.162-169, 2011
• Title: Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening Authors: Ö. Tüzüna, Y. Qiub, A. Slaouia, I. Gordonb, C. Mauricec, S. Venkatachalamb, S. Chatterjeea, G. Beaucarneb, J. Poortmansb aInESS, UMR 7163 UdS-CNRS, 23 Rue du Loess, F-67037 Strasbourg Cedex 2, France bIMEC, Kapeldreef 75, B-3001 Leuven, Belgium cSMS Centre, UMR CNRS 5146, Ecole des Mines de Saint Etienne, 158 Cours Fauriel, 42023 Saint Etienne Cedex 2, France Journal: Solar Energy Materials and Solar Cells, Vol. 94, pp. 1869-74, 2010
• Title: Thermal Annealing Effect on Electrical Properties of metal nitride gate electrodes with Hafnium Oxide gate dielectrics in nano-metric MOS Devices Authors: S. Chatterjeea, Y. Kuob, and J. Lub a School of Electrical Sciences, Vellore Institute of Technology, TN, Vellore 632014 bThin Film Nano and Microelectronics Research Laboratory, MS 3122, Texas A&M University, College Station, TX 77843-3122, USA Journal: Microelectronics Engineering, Vol. 85, pp. 202-9, 2008
• Title: Determination of Band Discontinuities in Slicon Heterostructures Authors: S. Chatterjeea, and L. K. Berab a School of Electrical Sciences, Vellore Institute of Technology, Vellore 632014 b Department of Process Integration, Kedah Darul Aman, Malaysia Journal: IETE Journal of Research, Vol. 53, No. 3, p. 199, 2007.
• Title: Silicon Heteroepitaxial Layer Characterization by atomic Force Microscopy Authors: S. K. Samantaa, L. K. Berab and S. Chatterjeec aMicroelectronics Laboratory, Dept. Electronics & ECE, Indian Institute of Technology, Vellore 632014 b Department of Process Integration, Kedah Darul Aman, Malaysia c School of Electrical Sciences, Vellore Institute of Technology, Vellore 632014 Journal: IETE Journal of Research, Vol. 53, No. 3, p. 185, 2007.
• Title: Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress Authors: S. Chatterjeea, Y. Kuoa, J. Lua, J. -Y. Tewga, and P. Majhib aThin Film Nano and Microelectronics Research Laboratory, MS 3122, Texas A&M University, College Station, TX 77843-3122, USA bInternational SEMATECH, 2706 Montopolis Drive, Austin TX 78741, USA Journal: Microelectronics Reliability, Vol. 46, pp. 69–76, 2006
• Title: Physical and electrical properties of Ta–N, Mo–N, and W–N electrodes on HfO2 high-k gate dielectric Authors: J. Lu, Y. Kuo, S. Chatterjee, and J. -Y. Tewg, Thin Film Nano and Microelectronics Research Laboratory, MS 3122, Texas A&M University, College Station, TX 77843-3122, USA Journal: J. Vac. Sci. Technol. B, Vol. 24 (1), pp. 349-57, 2006
• Title: Gate dielectrics on strained-Si/SiGe heterolayers Authors: C. K. Maitia, S. K. Samantab, S. Chatterjeec, G. K. Dalapatid, and L. K. Berae aDepartment of Electronics and ECE, IIT, Kharagpur 721302, India bSNDL, National University of Singapore, Blk E4A #02-04, Engineering Dr. 3, Singapore 117576, Singapore cThin Film Microelectronics Laboratory, 3122 Chemical Engineering Department, Texas A&M University, College Station, TX 77843-0001, USA dSchool of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne, Merz Court Newcastle upon Tyne, NE1 7RU, UK eInstitute of Microelectronics, Singapore 117685, Singapore Journal: Solid-State Electronics, Vol. 48, pp. 1369-89, 2004
• Title: Electrical properties of ZrO2 films on Si1-x-yGexCy epitaxial layers Authors: S. Chatterjee, G. K. Dalapati, S. K. Samanta, and C. K. Maiti Department of Electronics & ECE, IIT Kharagpur, Kharagpur 721302, India Journal: Applied Surface Science, Vol. 224, pp. 288-91, 2004
• Title: Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers Authors: S. K. Samanta, G. K. Dalapati, S. Chatterjee, and C. K. Maiti Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Applied Surface Science, Vol. 224, pp. 283-7, 2004
• Title: Ultrathin Oxynitride Films On Strained SiGe Layers by a Three-step NO/O2/NO Process Authors: S. K. Samanta, S. Chatterjee, S. Maikap, and C. K. Maiti, Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Solid-State Electronics, Vol. 48, pp. 91-7, 2004
• Title: Determination of band offsets in strained-Si heterolayers Authors: C. K. Maitia, S. K. Samantaa, S. Chatterjeea, G. K. Dalapatia, S. Bhattacharyab, B. M. Armstrongb, H. S. Gambleb, J. McCarthyc, T. S. Perovac and R. A. Moorec aDepartment of Electronics, IIT, Kharagpur 721302, India bSchool of Elec./Electronic Engineering, Queen's University of Belfast, UK cDepartment of Electronic Engineering, Trinity College, University of Dublin, Dublin 2, Ireland Journal: Thin Solid Films, Vol. 462-463, pp. 80-4, 2004
• Title: Electrical characterization of TiO2 gate oxides on strained-Si Authors: C. K. Maiti, S. K. Samanta, G. K. Dalapati, S. K. Nandi, and S. Chatterjee Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Microelectronic Engineering, Vol. 72, pp. 253-6, 2004
• Title: Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si Authors: C. K. Maitia, G. K. Dalapatia, S. Chatterjeea, S. K. Samantaa, S. Varmab and S. Patilb aDepartment of Electronics & ECE, IIT, Kharagpur 721302, India bInstitute of Physics, Bhubaneswar 751005, India Journal: Solid-State Electronics, Vol. 48, Issue 12, pp. 2235-41, 2004
• Title: Structural Characterization and Effects of Annealing on the Electrical Properties of Stacked SiOxNy/Ta2O5 Ultrathin Films on Strained-Si0.82Ge0.18 Substrates Authors: S. Chatterjee, S. K. Samanta, and C. K. Maiti Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: J. Phys. D: Appl. Phys., Vol. 36, pp. 901–7, 2003
• Title: Electrical Properties of Ultrathin TiO2 Films on Si1-yCy Heterolayers Authors: G. K. Dalapatia, S. Chatterjeea, S. K. Samantaa, S. K. Nandia, P. K. Boseb, S. Varmac, S. Patilc, and C. K. Maitia aDepartment of Electronics and ECE, IIT, Kharagpur 721302, India bDepartment of Mechanical Engineering, Jadavpur University, 700032, India cInstitute of Physics, Bhubaneswar 751005, India Journal: Solid-State Electronics, Vol. 47, pp. 1793-8, 2003
• Title: Interface Properties and Reliability of Ultrathin Oxynitride Films Grown on Strained Si1-xGex Substrates Authors: S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee, and C. K. Maiti, Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: J. Appl. Phys., Vol. 93, pp. 2464-71, 2003
• Title: Electrical properties of and conduction mechanism in ultrathin ZrO2 films on Si1-yCy heterolayers Authors: G. K. Dalapati, S. K. Samanta, S. Chatterjee, P. K. Bose1, S. Varma2, Shivprasad Patil2 and C. K. Maiti Department of Electronics & ECE, IIT Kharagpur 721302, India 1Department of Mechanical Engineering, Jadavpur University, 700032, India 2Institute of Physics, Bhubaneswar 751005, India Journal: Japanese Journal of Applied Physics, Vol. 43, pp. 3498-502, 2004
• Title: Electrical Properties of Deposited ZrO2 Films on ZnO/n-Si Substrates Authors: S. Chatterjee, S. K. Nandi, S. Maikap, S. K. Samanta, and C. K. Maiti Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Semicond. Sci. Technol. Vol. 18, pp. 92–6, 2003
• Title: Electrical Properties of Ta2O5 Gate Dielectric of Strained-Si Authors: C. K. Maiti, S. Chatterjee, G. K. Dalapati, and S. K. Samanta Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Electron. Lett., Vol. 39, pp. 497-9, 2003
• Title: Electrical Properties of TiO2 Films Deposited on Strained Si1-yCy Layers Authors: G. K. Dalapati, S. Chatterjee, S. K. Samanta, and C. K. Maiti Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Electron. Lett., Vol. 39, pp. 323-4, 2003
• Title: Electrical Characterization of Low Temperature Deposited TiO2 Films on Strained-SiGe Layers Authors: G. K. Dalapati, S. Chatterjee, S. K. Samanta, C. K. Maiti, Department of Electronics and ECE, IIT, Kharagpur 721302, India Journal: Applied Surface Science, Vol. 210, pp. 249-54, 2003
• Title: Characteristics of MIS Capacitors Using Ta2O5 Films Deposited on ZnO / p-Si Authors: Y.S. Noha, S. Chatterjeeb, S. Nandib, S.K. Samantab, C. K. Maitib, S. Maikapc, W. K. Choia aThin Film Technology Research Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 136-791, South Korea bDepartment of Electronics and ECE, IIT, Kharagpur 721302, India cSchool of Material Science and Engineering, Seoul National University, Seoul 151-742, South Korea Journal: Microelectronic Engineering, Vol. 66, pp. 637-42, 2003
• Title: Electrical Properties of Ta2O5 Films Deposited on ZnO Authors: S. K. Nandia, S. Chatterjeea, S. K. Samantaa, G. K. Dalapatia, P. K. Boseb, S. Varmac, Shivprasad Patilc, and C. K. Maitia aDept. of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302, India bDepartment of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India cInstitute of Physics, Bhubaneswar 751 005, India Journal: Bulletin of Materials Science, Vol. 26, No. 4, p 365-9, 2003
• Title: Reliability of Ultrathin (<2 nm) Oxides on Strained SiGe Heterolayers Authors: S. K. Samantaa, S. Chatterjeea, W. K. Choib, L. K. Berab, H. D. Banerjeec, and C. K. Maitia aDepartment of Electronics and ECE, IIT, Kharagpur 721 302, India bMicroelectronics Laboratory, Department of Electrical Engineering, NUS, Singapore, Singapore cMaterials Science Center, IIT, Kharagpur 721 302, India Journal: Semicond. Sci. Technol., Vol. 18, pp. 33-8, 2003
• Title: Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate Authors: S. K. Nandia, S. Chatterjeea, S. K. Samantaa, P. K. Boseb and C. K. Maitia, aDepartment of Electronics, Indian Institute of Technology, Kharagpur 721302, India bDepartment of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India Journal: Bulletin of Materials Science, Vol. 26, No. 7, pp. 693-7, 2003
• Title: Hafnium oxide gate dielectric for strained-Si1-xGex Authors: C. K. Maiti, S. Maikap, S. Chatterjee, S. K. Nandi, and S. K. Samanta, Department of Electronics, IIT Kharagpur, Kharagpur 721302, India Journal: Solid-State Electronics, Vol. 47, pp. 1995-2000, 2003
• Title: Minority Carrier Lifetime and Diffusion Length in Si1-x-yGexCy Heterolayers Authors: S. K. Samanta, S. Maikap, S. Chatterjee, and C. K. Maiti, Department of Electronics and ECE, IIT Kharagpur, Kharagpur 721302, India Journal: Solid-State Electronics, Vol. 47, pp. 893-7, 2003
• Title: Electrical Properties of Stacked Gate Dielectric (SiO2/ZrO2) Deposited on Strained SiGe Layers Authors: S. Chatterjeea, S. K. Samantaa, H. D. Banerjeeb, and C. K. Maitia aDepartment of Electronics and ECE, IIT Kharagpur, Kharagpur 721302, India bMaterials Science Center, IIT Kharagpur, Kharagpur 721302, India Journal: Thin Solid Films, Vol. 422, pp. 33­8, 2002
• Title: Effect of the Stack Layer on the Electrical Properties of Ta2O5 Gate Dielectrics Deposited on Strained-Si0.82Ge0.18 Substrates Authors: S. Chatterjeea, S. K. Samantaa, H. D. Banerjeeb, and C. K. Maitia aDepartment of Electronics and ECE, IIT Kharagpur, Kharagpur 721302, India bMaterials Science Center, IIT Kharagpur, Kharagpur 721302, India Journal: Semicond. Sci. Technol., Vol. 17, pp. 993-8, 2002
• Title: Temperature Dependence of Electrical Properties of N2O/O2/N2O -Grown Oxides on Strained SiGe Authors: S. K. Samanta, S. Chatterjee, L. K. Bera, H. D. Banerjee, and C. K. Maiti Department of Electronics & ECE, IIT Kharagpur 721302, India Journal: Appl. Phys. Lett., Vol. 80, pp. 2547-49, 2002
• Title: Investigations on Ta2O5/ZnO Insulator-Semiconductor Interfaces Authors: S. K. Nandi1, W. K. Choi2, Y. S. Noh2, M. S. Oh2, S. Maikap3, N. M. Hwang3, D. Y. Kim3, S. Chatterjee1, S. K. Samanta1, and C. K. Maiti1 1Department of Electronics & ECE, IIT Kharagpur, India 2Korea Institute of Science and Technology (KIST), Thin Film Technology Research Center, South Korea 3Seoul National University, Center for Microstructure Science of Materials, School of Material Science & Engineering, Seoul, South Korea Journal: Electron. Lett., Vol. 38, pp. 1390-2, 2002
• Title: Deposition of High-k ZrO2 Films on Strained SiGe Layers Using Microwave Plasma Authors: S. Chatterjee1, S. K. Samanta1, H. D. Banerjee2, and C. K. Maiti1, 1Department of Electronics & ECE, IIT Kharagpur, India 2Materials Science Center, IIT Kharagpur, India Journal: Electron. Lett., vol. 37, pp. 390-2, 2001
• Title: Metallo-organic Compound-based Plasma Enhanced CVD of ZrO2 Films for Microelectronic Applications Authors: S. Chatterjee, S. K. Samanta, H. D. Banerjee*, and C. K. Maiti, Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302 *Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India Journal: Bulletin of Materials Science, Vol. 24, pp. 579-82, 2001

Presentations/Conference Papers:

• S. Chatterjee, and Y. Kuo “Effects of interfacial charges on doped and undoped HfOx stack layer with TiN metal gate electrode for nano-scaled cmos generation” International Symposium on Semiconductor Materials and Devices, India, January 28-30, 2011.
• H. Pal, O. Biswas, and S. Chatterjee, “Optimization the Performance of Graded Multi-junction Solar cell” China Semiconductor Technology International Conference (CSTIC), China, 13-14th March, 2011.
• S. Chakraborti, S. Gupta Chatterjee, and S. Chatterjee “Modeling of electron mobility of GaN in low temperature and low electric field”, International Symposium on Semiconductor Materials and Devices, India, January 28-30, 2011.
• S. Chatterjee, Ö. Tüzün, S. Roques and A. Slaoui, “Role of Hydrogen Dilution in Silane on Optical Properties of ECR-PECVD Deposited a-Si:H Films”, Published in 24th EU-PVSEC, Germany, 2009.
• Tüzün, Y. Qiu, S. Chatterjee, S. Venkatachalam, C. Maurice, A. Slaoui, I. Gordon, G. Beaucarne, and J. Poortmans, “Crystallographic analysis and solar cells of Polysilicon films formed by Aluminium induced crystallization” Published in 24th EU-PVSEC, Germany, 2009.
• Tüzün, Y. Qiu, A. Slaoui, I. Gordon, C. Maurice, S. Venkatachalam, S. Chatterjee, G. Beaucarne, and J. Poortmans, “Properties of N-type Polycrystalline silicon solar cells formed by Aluminium induced crystallization and CVD Thickening” Published in EMRS, France, 2009.
  P. Dutta, S. Paul, S. Chatterjee, S. Tripathi, V. Bommisetty, D. Galipeau, A. Liu, “Comparative Study of nc-Si:H Deposited by RF Magnetron Sputtering using Crystalline and Polycrystalline Silicon Targets” M4 (467), 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, May 2008, USA.
• S. Paul, S. Chatterjee, Y. Chen, P. Dutta, V. Bommisetty, D. Galipeau, “Effect of Target Phase on Structural and Electrical Properties of Unhydrogenated Amorphous Silicon Thin Films Deposited by RF Magnetron Sputtering” I12 (458), 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, May 2008, USA.
• S. Chatterjee, Y. Kuo, J. Lu, and A. Birge, “Annealing effect on electrical properties of Zr-doped HfOx gate dielectrics for Nanoscale CMOS application” Fourteenth International Workshop on the Physics of Semiconductor Devices (IWPSD), 2007, India.
  B. Lokesh and S. Chatterjee, “Advanced Mixed Signal Design using CMOS Current Mode Logic Gates” International conference on CDNLive! Silicon Valley, CA, September, 2007, USA.
• S. Chatterjee, Y. Kuo, J. Lu, and J. Yan, “Influence of 1nm interface layer on Electrical Properties of Zr doped HfO2 high-k gate dielectrics for sub-65 nm technology generation” International Conference on NanoScience and NanoTechnology (ICNSNT), August 20-26, 2006, India.
• T. Yuan, W. Luo, Y. Kuo, J. Lu, J. Yan, S. Chatterjee, A. Birge, and W. Kuo, “Charge Trapping and Dielectric Relaxation in Connection with Breakdown of High-k Gate Dielectric Stacks”, Lester Eastman Conference on High Performance Devices, P. 65, August 2-4, 2006, USA.
• Y. Kuo, J. Lu, J. Yan, A. Birge, C.-H. Lin, S. Chatterjee, W. Luo, T. Yuan, J.-Y. Tewg, and W. Kuo, “High Performance High-k Gate Dielectrics Based on Mixed Oxides”, Lester Eastman Conference on High Performance Devices, P. 72, August 2-4, 2006, USA.
• S. Chatterjee, Y. Kuo, J. Lu, J. -Y. Tewg, and P. Majhi, “Effects of Post Metallization Annealing on the Electrical Reliability of Ultra-thin HfO2 Films with MoN and WN Gate Electrodes”, IEEE International Reliability Physics Symposium (IRPS), April 17-21, 2005, USA.
• J. Yan, J. Lu, S. Chatterjee, H. C. Kim, and Y. Kuo, “Zr-doped HfO2 High-k Dielectric with an Inserted HfNx Interface Layer”, EM-TuP37, AVS 52nd International Symposium, October, 2005, USA.
• Y. Kuo, J. Lu, J. Yan, S. Chatterjee, T. Yuan, H. C. Kim, J. Peterson and M. Gardner, “Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics”, 208th meeting of the Electrochemical. Society, Abs. # 548, Los Angeles, California, 2005, USA.
• J. Yan, Y. Kuo, S. Chatterjee, and J. Lu, “Electrical Characterization of Doped Hafnium Oxide High-k Films”, 207th meeting of the Electrochemical. Society, Abs. # 645, Quebec City, 2005, Canada.
• J. Lu, J. Yan, S. Chatterjee, H. C. Kim, and Y. Kuo, “Doping of Hafnium Oxide High k Film with Zirconium”, AVS International Conference on Microelectronics and Interfaces, March, 2005, USA.
• J. Lu, S. Chatterjee, J.-Y. Tewg, Y. Kuo, H. C. Wen, P. Majhi, and G. Bersuker, "Metal Nitride Gate Electrode Effects on Dielectric Properties of HfO2 High-k Gate Dielectrics", AVS 51st International Symposium, November, 2004, USA.
• Y. Kuo, S. Chatterjee, J. Lu, J.-Y Tewg, H.-C. Wen, and P. Majhi, “Electrical Characterization of Ultra-Thin HfO2 Gate Dielectric with Metal Nitride Gate Electrodes”, International Workshop on Electrical Characterization and Reliability for High-k Devices, November 4-5, 2004, USA.
• S. Chatterjee, G. K. Dalapati, S. K. Samanta, H. D. Banerjee, and C. K. Maiti, “Stress Induced Leakage Current in ZrO2 Gate Dielectric on Strained-SiGe”, International Conference on Computers and Devices for Communication (CODEC), 2004, India.
• G. K. Dalapati, S. Chatterjee, S. K. Samanta, P. K. Bose, and C. K. Maiti, “Leakage Current Characteristics of High-k ZrO2 Films on Si1-yCy”, International Conference on Communication, Devices and Intelligent Systems (CODIS), 2004, India.
• C. K. Maiti, S. Chatterjee, and S. K. Samanta, “Leakage Current Conduction Mechanism in Microwave Plasma Nitrided Ta2O5 Gate Dielectrics”, International Conference on Communication, Devices and Intelligent Systems (CODIS), 2004, India.
• G. K. Dalapati, S. K. Samanta, S. Chatterjee, and C. K. Maiti, “Charge Trapping Properties of ZrO2 Films on Si1-yCy”, International Conference on Computers and Devices for Communication (CODEC), 2004, India.
• S. Chatterjee, S. K. Samanta, G. K. Dalapati, and C. K. Maiti, “Alternative Gate Dielectrics on SiGeC Heterolayers”, International Conference on Materials for Advanced Technologies (ICMAT) 2003, Singapore .
• S. Chatterjee, G. K. Dalapati, S. K. Samanta, and C. K. Maiti, “Electrical Properties of ZrO2 Films on Si1-x-yGexCy Epitaxial Layers”, 1st International SiGe Technology and Device Meeting (ISTDM), pp. 45-6, 2003, Japan.
• G. K. Dalapati, S. K. Samanta, S. Chatterjee, P. K. Bose, and C. K. Maiti, “Temperature Dependence of Charge Trapping and Current Conduction in Ta2O5 Films on Si1-yCy", International Workshop on the Physics of Semiconductor Devices (IWPSD), pp. 280-2, 2003, India.
• S. K. Samanta, G. K. Dalapati, S. Chatterjee, and C. K. Maiti, “Minority Carrier Lifetime and Diffusion Length in Si1-x-yGexCy and Si1-yCy Heterolayers,” 1st International SiGe Technology and Device Meeting (ISTDM), pp. 43-4. 2003, Japan.
• C. K. Maiti, S. K. Samanta, S. Chatterjee, and G. K. Dalapati, “Determination of Band Offsets in Strained-Si Heterolayers”, International Conference on Materials for Advanced Technologies (ICMAT), 2003, Singapore.
• G. K. Dalapati, S. K. Samanta, S. Chatterjee, and C. K. Maiti, “Studies on the Reliability of Ultrathin High-k Titanium Oxide Deposited on strained-SiC Layers by Microwave Plasma”, International Conference on Materials for Advanced Technologies (ICMAT), 2003, Singapore.
• C. K. Maiti, S. K. Samanta, G. K. Dalapati, and S. Chatterjee, “Electrical characterization of SiOxNy/Ta2O5 Stacked Gate Oxides on Strained-Si”, International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2003, Singapore.
• S. Bhattacharya, S. K. Samanta, S. Chatterjee, John McCarthy, B.M. Armstrong, H. S. Gamble, C. K. Maiti, T. Perova, and A. Moore, “High-k ZrO2 Gate Dielectric on Strained-Si”, Proceedings in Materials Research Society (MRS ), Vol. 786, E3.22, Fall- 2003, USA.
• S. Bhattacharya, S.K. Samanta, S. Chatterjee, J. McCarthy, B.M. Armstrong, H.S. Gamble, C.K. Maiti, T. Perova and R.A. Moore, “Conduction Mechanism in High-k ZrO2 Gate Dielectric Films on strained-Ge Layers”, International Semiconductor Device Research Symposium (ISDRS), December 10-12, 2003, University of Maryland, USA.
• G. K. Dalapati, S. K. Samanta, S. Chatterjee, P. K. Bose, S. Varma, Shivprasad Patil, and C. K. Maiti, “Electrical properties and conduction mechanism of ZrO2 films on Si1-yCy”, International Conference on Solid State Devices and Materials (SSDM), 2003, Japan.
• C. K. Maiti, S. K. Samanta, G. K. Dalapati, S. K. Nandi and S. Chatterjee, “Electrical characterization of TiO2 Gate Oxides on Strained-Si”, 13th Bi- annual Conference on Insulating films on semiconductors (INFOS), June, 2003, Spain.
• G. K. Dalapati, S. Chatterjee, S. K. Samanta, P. K. Bose, and C. K. Maiti, “Electrical Properties of Silicon Dioxide Films on SiC Heterolayers”, Horizon of Telecommunication (HOT), p. 91, 2003, India.
• S. Chatterjee, G. K. Dalapati, S. K. Samanta, H. D. Banerjee, and C. K. Maiti, “Conduction Mechanism in Stacked High-k Dielectric Films”, Horizon of Telecommunication (HOT), p. 88, 2003, India.
• C. K. Maiti, S. Chatterjee, G. K. Dalapati, and S. K. Samanta, “Deposition of ZrO2 Films on strained-Si”, Horizon of Telecommunication (HOT), p. 14, 2003, India.
• S. K. Nandi, S. Chatterjee, S. K. Samanta, P. K. Bose and C. K. Maiti, “Photoluminescence Studies on Zinc Oxide”, Horizon of Telecommunication (HOT), p. 15, 2003, India.
• S. Chatterjee, S. K. Samanta, H. D. Banerjee and C. K. Maiti, “Electrical Properties of High Permittivity Thin Film Nanolaminates”, National Symposium on Nanostructured Materials, p. 78, 2002, India.
• G. K. Dalapati, S. Chatterjee, S. K. Samanta, P. K. Bose, and C. K. Maiti, “Electrical Properties of Ultrathin TiO2 Films”, National Symposium on Nanostructured Materials, p. 77, 2002, India
• S. K. Nandi, S. Chatterjee, S. K. Samanta, S. Maikap, P. K. Bose and C. K. Maiti, “Deposition of Ultrathin Ta2O5/ZnO Nanolayers on p-Si”, National Symposium on Nanostructured Materials, p 79, December 2002, India
• Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C. K. Maiti, S. Maikap, W. K. Choi, “Chracteristics of MIS Capacitors Using Ta2O5 Films Deposited on ZnO/p-Si”, The 8th IUMRS International Conference on Electronic Materials, pp. 652-3, 2002, Republic of China.
• S. Chatterjee, S. K. Samanta, H. D. Banerjee, and C. K. Maiti, "Organometallic Compound-based Plasma Enhanced CVD of ZrO2 Films for ULSI Applications", Proc. of AGM of MRSI-12, p- 58, 2001, India.
• S. Chatterjee, S. K. Samanta, H. D. Banerjee, and C. K. Maiti, "Electrical Properties of Ultrathin Stacked SiO2/ZrO2 Gate Dielectrics", XI-International workshop on Physics and Semiconductor device (IWPSD), p-1069, 2001, India.
• S. K. Samanta, S. Chatterjee, H. D. Banerjee, and C. K. Maiti, “Temperature Dependence of Electrical Properties of Ultrathin Nitrided Oxide Grown on Strained-SiGe by Rapid Thermal Oxidation”, XI-International workshop on Physics and Semiconductor device (IWPSD), p- 1225, 2001, India.
• L. K. Bera, W. K. Choi, D. McNeill, S. K. Ray, S. Chatterjee, and C. K. Maiti, "Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide", Proceedings in Materials Research Society (MRS), 640, P-H5.14.1, 2001, USA.
• S. K. Samanta, S. Chatterjee, H. D. Banerjee and C. K. Maiti, “Electrical Characteristics of TEOS-based Oxynitride Films Deposited by Plasma Enhanced CVD”, Processing and Characterization of Special Materials, pp. 186-9, 2001, India.

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